Semiconductor device

ABSTRACT

A semiconductor device comprises a semiconductor substrate, a first circuit formed on the substrate, and a second circuit connected to the first circuit as an input/output portion thereof and powered by a voltage higher than that for the first circuit, the first circuit including a first and a second field-effect transistor, the first drain region of the first transistor accompanying a first load capacitance, the second drain region of the second transistor accompanying a second load capacitance smaller than the first load capacitance, and the first gate insulation film of the first transistor having an average relative dielectric constant higher than that of the second gate insulation film of the second transistor, thereby realizing a high operation speed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2002-259598, filed Sep. 5,2002, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device.

2. Description of the Related Art

For a field-effect transistor for use in a related-art large scaleintegrated circuit (LSI) apparatus, miniaturization of elements has beenadvanced in order to increase the operation speed and to reduce powerconsumption. As a method of miniaturizing an element, especially theeffective thickness of the gate insulation film has been reduced.

However, with the reduction of the thickness of the silicon oxide filmwhich has heretofore been used in the gate insulation film, a problemoccurs that a tunnel current flows through the film. To solve theproblem, a metal silicate material, which is high in relative dielectricconstant compared with silicon oxide, has been used in the gateinsulation film. For the gate insulation film formed of the metalsilicate material, even with about 1 nm in terms of an equivalentsilicon oxide film thickness, the actual physical film thickness can besufficiently large to prevent the tunnel current.

Moreover, to increase the sophistication of the integrated circuit whilekeeping the power supply voltage constant, there is a method of drivingtransistors constituting an input/output circuit at a high voltage; anddriving transistors constituting an inner circuit other than aninput/output portion at a low voltage. Therefore, an LSI apparatus hasbeen proposed in which the transistors constituting the input/outputcircuit each includes a gate insulation film formed of a silicon oxidebased material and in which the transistors constituting the innercircuit each includes a gate insulation film containing a dielectricmaterial higher in dielectric constant than the silicon oxide basedmaterial (e.g., see Jpn. Pat. Appln. KOKAI Publication No. 2000-307010).

As described above, in the LSI apparatus, field-effect transistorsconnected to various load capacitances are integrated. However, in therelated-art LSI apparatus, in the internal circuit which actuallyperforms a calculation process, for both the field-effect transistorsconnected to a relatively large load capacitance and a relatively smallload capacitance, the gate insulation film is formed of the samematerial. Therefore, performance of the whole LSI apparatus cannot beenhanced.

Under these circumstances, there has been a demand for realization of asemiconductor device in which a plurality of transistors havingappropriate driving forces in accordance with a size of the loadcapacitance can be integrated as the internal circuit on onesemiconductor substrate.

BRIEF SUMMARY OF THE INVENTION

According to one aspect of the present invention, there is provided asemiconductor device comprising:

-   -   a semiconductor substrate;    -   a first circuit formed on the semiconductor substrate, the first        circuit including first and second field-effect transistors,    -   the first field-effect transistor comprising:        -   a first source region and a first drain region formed apart            from each other on a surface of the semiconductor substrate;        -   a first gate insulation film formed between the first source            region and the first drain region; and        -   a first gate electrode formed on the first gate insulation            film,    -   the second field-effect transistor comprising:        -   a second source region and a second drain region formed            apart from each other and apart from the first field-effect            transistor on the surface of the semiconductor substrate;        -   a second gate insulation film formed between the second            source region and the second drain region; and        -   a second gate electrode formed on the second gate insulation            film,    -   the first drain region of the first field-effect transistor        accompanying a first load capacitance, the second drain region        of the second field-effect transistor accompanying a second load        capacitance which is smaller than the first load capacitance,        and the first gate insulation film of the first field-effect        transistor having an average relative dielectric constant higher        than that of the second gate insulation film of the second        field-effect transistor, and    -   a second circuit coupled to the first circuit as an input/output        portion of the first circuit and powered by a voltage higher        than that for the first circuit.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a perspective view schematically showing the state of aninsulation film in which particles each having a relative dielectricconstant ε₂ in a rectangular parallelepiped having a relative dielectricconstant ε₁;

FIG. 2 is a graph showing the relation between an average relativedielectric constant of the insulation film and R (radius of theparticle)/T (film thickness);

FIG. 3 is a diagram showing the relation between the relative dielectricconstant and a metal composition ratio X of (MO₂)_(x)(SiO₂)_(1−x);

FIG. 4 is a schematic view showing metal oxide precipitated in a gateinsulation film;

FIG. 5 is a circuit diagram of a model for use in analyzing an operationspeed;

FIG. 6 is a block diagram of a semiconductor device according to a firstembodiment of the present invention;

FIG. 7 is a sectional view of the semiconductor device of the firstembodiment;

FIG. 8 is a schematic view showing a load capacitance of thesemiconductor device;

FIGS. 9A and 9B are sectional views of the semiconductor deviceaccording to the first embodiment;

FIGS. 10A and 10B are other sectional views of the semiconductor deviceaccording to the first embodiment;

FIGS. 11A and 11B are further sectional views of the semiconductordevice according to the first embodiment;

FIGS. 12 to 19 are sectional views showing a manufacturing process ofthe semiconductor device according to a second embodiment in stepwisemanner;

FIGS. 20 to 24 are sectional views showing the manufacturing process ofthe semiconductor device according to a third embodiment in stepwisemanner;

FIGS. 25 to 27 are sectional views showing the manufacturing process ofthe semiconductor device according to a fourth embodiment in stepwisemanner; and

FIG. 28 is a sectional view of the semiconductor device according to amodification example of the fourth embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Prior to concrete description of embodiments, the technical backgroundof the present invention will be described.

The present inventors have studied metal silicate materials which aregate insulation film materials of a field-effect transistor. For themetal silicate material, a heat step of improving film quality afterforming a film on a semiconductor substrate is required. However, themetal in the gate insulation film has a property of being crystallizedand precipitated in the form of metal oxide in accordance with thetemperature or time of the heat step and metal concentration in themetal silicate film.

Therefore, with the use of the metal silicate material in the gateinsulation film material, after the heat step, crystal grains of metaloxide are precipitated in the gate insulation film variously with eachelement. Accordingly, crystalline and amorphous materials exist in thegate insulation film, and component elements of the gate insulation filmbecome nonuniform. As a result, the relative dielectric constant of thegate insulation film becomes nonuniform with each element. Here, as anindex to quantify the nonuniformity, a standard deviation of volumes ofthe metal oxide crystal grains in the gate insulation film can be usedto quantify the nonuniformity.

The present inventors have used a metal silicate film in which metaloxide is precipitated as an example to model the average relativedielectric constant of the gate insulation film having nonuniformity inthe relative dielectric constant, and have obtained the following newfindings. The “average relative dielectric constant” referred to hereinis a relative dielectric constant obtained by considering theelectrostatic capacitance per unit area obtained when flat electrodesare disposed on opposite sufficiently broad surfaces of a film as theelectrostatic capacitance of a parallel flat plate capacitor constitutedby a uniform dielectric material.

As shown in FIG. 1, a rectangular parallelepiped 1 in which particles 2each having a relative dielectric constant ε₂ are embedded and which hasa relative dielectric constant ε₁ is formed into a model of the metalsilicate film in which metal oxide is precipitated.

Under this modeling, the average relative dielectric constant (ε_(av))of the film can be represented by the following equation, in which afield produced by electric charges induced onto a depolarization field,Lorentz field, and electrode is considered. This has been newlydiscovered by this study. $\begin{matrix}{ɛ_{av} = {ɛ_{1}\left\lbrack {1 + \frac{\frac{4\left( {ɛ_{2} - ɛ_{1}} \right)}{{2ɛ_{1}} + ɛ_{2}}{\pi\left( \frac{R}{T} \right)}^{3}\left( {nT}^{2} \right)}{1 - {\frac{4\left( {ɛ_{2} - ɛ_{1}} \right)}{{2ɛ_{1}} + ɛ_{2}}{\zeta(3)}\left( \frac{R}{T} \right)^{3}}}} \right\rbrack}} & (1)\end{matrix}$wherein T denotes the thickness of an insulation film, R denotes theradius of the particle having the relative dielectric constant ε₂, ndenotes the number of particles each having the relative dielectricconstant ε₂ per unit area, considered in an in-plane direction of theinsulation film, and ζ (3) denotes the total sum of a cubic inversenumber of a natural number. It is to be noted that in the calculationresult described herein, the center of the particle having the relativedielectric constant ε₂ is assumed to be in the middle of the thicknessdirection of the insulation film. However, since dependence of theaverage relative dielectric constant on a position of the particle isweak, the center of the particle does not necessarily agree with themiddle of the thickness direction of the insulation film. Even in thiscase, a similar result is obtained.

FIG. 2 shows the dependence of the average relative dielectric constanton R/T with nT²=0.8 as an example of the newly obtained finding.

In this graph, the average value ( X) of metal concentration in the filmis used as a parameter, and is varied into three values of 0.1, 0.3, and0.5. A region having the relative dielectric constant ε₂ is assumed tobe precipitated metal oxide, and ε₂=20 is assumed. For the region of ε₁the metal silicate material whose metal concentration decreases belowthe average value in the film with the precipitation of metal oxide isassumed. The dielectric constant is calculated using the followingequation (2). It is to be noted that this equation is detailed in G.Lucovsky et al., App. Phys. Lett. Vo. 77 no. 18 (2000) pp. 2912 to 2914.

Relative dielectric constant of metal silicate material=12-8.1×(1−2×X)⁴   (2)

Here, the metal silicate material is (MO₂)_(x)(SiO₂)_(1−x) (M representsthe metal, Hf or Zr in this case). As apparent from the above equation,X denotes the composition ratio of metal oxide, but X is also equal to(the number of atoms of M)/(the number of atoms of M+the number of atomsof Si). Therefore, in this case, X can also refer to the metalconcentration. This equation is shown in a graph of FIG. 3. As seen inFIG. 3, when the composition ratio X of metal oxide increases, therelative dielectric constant of the metal silicate material rises.

Moreover, different from tendency shown in FIG. 3, as shown in a curve Aof FIG. 2, when the average value of the metal concentration of the gateinsulation film is low, for example, when the average value of the metalconcentration in the gate insulation film is 0.1, the average relativedielectric constant decreases with the precipitation of metal oxide(with an increase of R/T). Especially, the decrease in the relativedielectric constant is remarkable if R/T exceeds 0.1.

As shown by a curve B in FIG. 2, when the average value of the metalconcentration of the gate insulation film is higher than 0.1, forexample, when the average value of the metal concentration in the gateinsulation film is 0.3, the average relative dielectric constantslightly increases with the precipitation of metal oxide and thendecreases.

Moreover, as shown by a curve C in FIG. 2, when the average value of themetal concentration in the gate insulation film is higher than 0.3, forexample, when the average value of the metal concentration in the gateinsulation film is 0.5, the average relative dielectric constant furtherincreases with the precipitation of metal oxide. This new finding hasbeen obtained.

It is to be noted that when calculation is performed based on theequation (1), a new finding is obtained. That is, with the precipitationof metal oxide, the average relative dielectric constant increases whenthe average value of the metal concentration is higher than about 25% asa boundary. When the average value is lower than the boundary, theaverage relative dielectric constant decreases. Moreover, the increaseof the average relative dielectric constant accompanied with theprecipitation of metal oxide is remarkable when the average value of themetal concentration is about 40% or more. The increase is furtherremarkable with an average value of 50% or more. This new finding hasalso been obtained.

Additionally, in an internal circuit of an integrated circuit, afield-effect transistor has a function of driving another field-effecttransistor, and also works as a load capacitance of another field-effecttransistor. Considering from a viewpoint of the load of anotherfield-effect transistor, an electrostatic capacitance which is the loadcapacitance of the field-effect transistor is preferably smaller.

Therefore, considering that the field-effect transistor is the loadcapacitance, when the average value of the metal concentration in themetal silicate film is low as 0.1, and when metal oxide is precipitated,the electrostatic capacitance preferably becomes low. Conversely, whenthe average value of the metal concentration in the metal silicate filmis higher than 0.3, and when metal oxide is not precipitated, theelectrostatic capacitance is preferably prevented from rising. This newfinding has also been obtained.

On the other hand, considering of the function of the field-effecttransistor to drive another field-effect transistor, the relativedielectric constant of the gate insulation film is preferably larger.Additionally, if the precipitation of metal oxide occurs in the gateinsulation film using the metal silicate material, the dielectricconstant increases only in a region where deposits are generated.Therefore, when voltage is applied to the gate electrode, a large numberof carriers are induced in a channel region in the vicinity of thedeposits of metal oxide. Even when a large number of carriers areinduced, this is restricted in the vicinity of the deposits of metaloxide having a high dielectric constant. Therefore, these carrierscannot contribute to electric conduction.

For this reason, a current driving capability of the field-effecttransistor is considered to be substantially determined by a dielectricconstant of a region where the dielectric constant in the gateinsulation film is low. That is, the dielectric constant of the metalsilicate material whose metal concentration drops with the precipitationof metal oxide determines the current driving capability of thefield-effect transistor.

As shown in FIGS. 2 and 3, considering from the dependence of therelative dielectric constant of metal silicate on the metalconcentration, when the average value of the metal concentration in thegate insulation film is low as 0.1, the relative dielectric constantdrops with the precipitation of metal oxide, and the current drivingcapability of the field-effect transistor drops.

However, when the average value of the metal concentration is higherthan 0.3, the dielectric constant of the region having the relativedielectric constant ε1 hardly changes, even if the precipitation ofmetal oxides occurs. Therefore, the precipitation of metal oxides, if itoccurs, hardly lowers the current driving capability. Furthermore, asshown in FIG. 4, when a path for connecting a source 3 side to a drain 4side is formed by metal oxide 6 precipitated in a gate insulation film5, the carriers induced in a channel region (not shown) can move, andthe current driving capability of the field-effect transistor istherefore enhanced.

It is to be noted that FIG. 4 is a top plan view showing that a gateelectrode (not shown) having the same shape as that of the gateinsulation film is formed on a semiconductor substrate via the gateinsulation film 5. The gate electrode is positioned between the sourceregion 3 and drain region 4.

FIG. 4 shows only one path of the metal oxide, but this is a schematicview for description. It is not essential that there is only one suchpath. Even when a plurality of paths exist, the essence of the followingdescription does not change at all. This also applies, even if the pathincludes branches or has a mesh form.

When this path can be formed, a large amount of induced carriers cancontribute to the electric conduction. Moreover, as shown in FIG. 3,when the average value of the metal concentration in the metal silicatematerial is high, the drop of the relative dielectric constant of themetal silicate material by the drop of the metal concentration in themetal silicate material with the precipitation of metal oxide isremarkably small.

As a result, when the average value of the metal concentration in thegate insulation film formed of the metal silicate material is higherthan 0.3, and when the precipitation of a large amount of metal oxideoccurs, the current driving capability of the field-effect transistorrises with the precipitation of metal oxide.

As described above, considering from a viewpoint of the current drivingcapability of the field-effect transistor, when the average value of themetal concentration in the gate insulation film is as low as 0.1, metaloxide is not precipitated preferably. When the average value of themetal concentration in the gate insulation film is higher than 0.3, thenew finding that metal oxide is preferably precipitated is obtained.

From the above-described consideration, in the field-effect transistorin which the metal silicate material is used in the gate insulationfilm, even when the average value of the metal concentration in the gateinsulation film is high or low, there is a problem of trade-off inconsideration of two viewpoints including the current driving capabilityand load capacitance.

This is the new finding obtained by this study with respect to thedielectric constant of the gate insulation film which has nonuniformityin the relative dielectric constant.

To solve the problem, the present inventors have considered and provideda semiconductor device in which the field-effect transistor containingthe deposit of metal oxide and the field-effect transistor containing noor little amount of the deposit of metal oxide are both integrated inthe gate insulation film formed of the metal silicate material.

In this case, the field-effect transistor large both in the currentdriving capability and capacitance and the field-effect transistor smallboth in the current driving capability and capacitance are integrated asthe internal circuit on one semiconductor substrate. In the integratedcircuit, each field-effect transistor has a function of driving anotherfield-effect transistor, and also is the load of the other field-effecttransistor.

Here, the field-effect transistor including a large load capacitanceconnected to the drain region is regarded as a first field-effecttransistor, and the field-effect transistor including a relativelysmaller load capacitance connected to the drain region is regarded as asecond field-effect transistor.

Since the load capacitance connected to the drain region of the firstfield-effect transistor is large, much time is required forcharge/discharge, and this limits an operation speed of the wholesemiconductor device. Therefore, the current driving capability of thefirst field-effect transistor is preferably larger in order to enhancethe operation speed of the whole semiconductor device. Therefore, in anelement including a large load capacitance to be driven such as thefirst field-effect transistor, it is preferable to precipitate the metaloxide in the gate insulation film and to increase the average relativedielectric constant of the gate insulation film.

On the other hand, for the second field-effect transistor, as comparedwith the first field-effect transistor, since the load capacitanceconnected to the drain region is small, the current driving capabilityof the second field-effect transistor does not limit the operation speedof the whole semiconductor device. Therefore, when the current drivingcapability of the second field-effect transistor increases, theoperation speed of the whole semiconductor device cannot be expected tobe largely enhanced.

On the other hand, when the metal oxide is precipitated in the gateinsulation film of the second field-effect transistor, a parasiticcapacitance is increased. Therefore, a total load capacitance of thefield-effect transistor including the load capacitance of the secondfield-effect transistor increases. Therefore, in an element including asmall load capacitance to be driven such as the second field-effecttransistor, the metal oxide (crystalline material) is prevented frombeing precipitated in the gate insulation film if possible, and theparasitic capacitance has to be reduced. Therefore, the whole gateinsulation film is preferably formed of the amorphous material.

Described above is the case where, the average value of the metalconcentration in the gate insulation film is higher than 0.3, and asshown in FIG. 4, the source 3 is connected to the drain 4 by the path ofthe region 6 having the high relative dielectric constant with theprecipitation of metal oxide.

When the average value of the metal concentration in the gate insulationfilm is 0.1 or less, the situation differs. In this case, asaforementioned, with the precipitation of metal oxide, the currentdriving capability of the field-effect transistor drops. However, asshown in FIG. 2, the average relative dielectric constant of the gateinsulation film also drops. Therefore, considering from the currentdriving capability of the field-effect transistor, the precipitation ofmetal oxide in the gate insulation film is not preferable. Consideringfrom a viewpoint that the field-effect transistor makes the loadcapacitance connected to the other field-effect transistor, theprecipitation of metal oxide is preferable.

Therefore, when the average value of the metal concentration in the gateinsulation film is 0.1 or less, in the field-effect transistor having asmall ratio of the capacitance occupying the total load capacitance ofthe other field-effect transistor including the load capacitance of thefield-effect transistor, the precipitation of metal oxide in the gateinsulation film is preferably inhibited.

Even when the average value of the metal concentration in the gateinsulation film is 0.3 or more, the precipitation of metal oxide isinhibited, and the composition ratio (X) of metal oxide is controlled tobe 0.1 or less. Then, the field-effect transistor can be used as thesecond field-effect transistor. The above effect is also attainable bythe formation that a ratio of an average radius of the metal oxide to athickness of the insulation film is 0.1 or less.

In the semiconductor device of the present invention, metal oxide isprecipitated in the field-effect transistor in which it is preferable toprecipitate the metal oxide. The metal oxide is inhibited from beingprecipitated in the field-effect transistor in which it is notpreferable to precipitate the metal oxide. As a result, a high operationspeed is realized in the semiconductor device of the present invention.

FIG. 5 shows a schematic view of the semiconductor device in which acircuit configured by continuous inverters is integrated. As shown inFIG. 5, the inverters are denoted with I1, I2, I3, I4, I5, I6, and I7 inorder from an input portion. The inverter I7 is connected to an outputportion. The inverters I1, I2, I3, I4, I5, I6, and I7 form the internalcircuit. It is assumed that a capacitance making the load of theprevious-stage inverter is C, the current driving capability of theelement forming the inverter is I, and the power supply voltage of thecircuit is V. It is also assumed that the output of the inverter I5 isconnected to a load capacitance having a size of 100×C. Then, inlowest-order approximation, a propagation delay time of the inverter I5is 101 CV/I, and the propagation delay time of the other inverters isCV/I.

When CV/I=τ, a time required for propagating a signal to a node 2 from anode 1 is 105 τ. According to the method of the present embodiment, forthe gate insulation film of the inverter I5 whose connected loadcapacitance is large, the average metal concentration is set to 0.3 ormore, so that the precipitation of the metal oxide occurs. For the gateinsulation films of the other inverters whose connection loadcapacitances are small, the precipitation is inhibited although theaverage metal concentration is same.

Conditions of the precipitation are assumed that the average value ofmetal concentration shown in FIG. 2=0.5, nT²=0.8, R/T=0.46. This is acondition on which the curve C shown in FIG. 2 is maximized, and theaverage relative dielectric constant of the gate insulation film is 14.

The relative dielectric constant of the gate insulation film whichcontributes to the current driving capability of the field-effecttransistor is obtained as 14.3 considering from parallel connection ofparallel flat plate capacitors including insulation films having twotypes of relative dielectric constant in accordance with the amount ofthe precipitated metal oxide. The relative dielectric constant of metalsilicate of a periphery in which the metal concentration drops with theprecipitation of the metal oxide is calculated using the above equation(2).

However, as shown in FIG. 4, considering that the boundary of the region6 having the high dielectric constant caused with the precipitation ofthe metal oxide is not a straight line, the relative dielectric constantof the gate insulation film contributing to the current drivingcapability is assumed to be lower than that of the region 6. Then, it ispresumed that an effective ratio of the region 6 having the highrelative dielectric constant caused with the precipitation of the metaloxide is ½ of a value obtained from a deposit amount. Under thispresumption, the relative dielectric constant of the gate insulationfilm contributing to the current driving capability is obtained as 12.9.

When this value is used to control presence/absence of the precipitationof the metal oxide according to the method of the present embodiment, atime required for propagating the signal to the node 2 from the node 1in the circuit of FIG. 5 is obtained to be 99 τ.

In this manner, with the circuit shown in FIG. 5, the operation speed isenhanced by 6%. In this example, a case in which the load capacitancehas only two types of sizes has been described. In the case, when thedielectric constant is varied with respect to the gate insulation filmof each field-effect transistor to obtain optimum condition, the use ofthe insulation film having the high or low relative dielectric constantin the gate insulation film in the corresponding element may bedetermined.

The embodiments of the present invention will concretely be describedhereinafter.

First Embodiment

FIG. 6 is a block diagram showing a configuration of a semiconductordevice according to a first embodiment of the present invention. Asshown, the semiconductor device of the first embodiment includes aninput circuit 21, an internal circuit (first circuit) 22, and an outputcircuit 23. Power supply voltages VCC of the input/output circuits(second circuits) 21 and 23 are set to be higher than a power supplyvoltage VDD of the internal circuit 22.

Here, the internal circuit (first circuit) 22 actually performscalculation, and is driven at a low voltage. The input/output circuits(second circuits) 21 and 23 function as an interface between theinternal circuit and the outside, and are driven at a voltage higherthan that of the internal circuit.

The internal circuit 22 includes two types of field-effect transistorsQ1 and Q2. The load connected to the drain of the first field-effecttransistor Q1 is representatively denoted with CL1 in the drawing.Similarly the load of the second field-effect transistor Q2 is denotedwith CL2. In this case, CL1>CL2.

It is to be noted that the first field-effect transistor substantiallydrives the output circuit 23 in many cases, and therefore thecapacitance of the output circuit 23 is included in CL1.

Furthermore, in the present embodiment, the average relative dielectricconstant of the gate insulation film of the first field-effecttransistor Q1 is set to be higher than that of the gate insulation filmof the second field-effect transistor.

FIG. 7 is a sectional view showing one example of the internal circuit22, the right transistor being Q1 and the left transistor being Q2. Inthe internal circuit 22, the first field-effect transistor Q1 does nothave to be necessarily disposed adjacent to the second field-effecttransistor. However, in FIG. 7, for the sake of convenience, thetransistors are disposed adjacent to each other.

Here, an N channel field-effect transistor will be described as anexample of the element of the integrated circuit. This also applies witha P channel field-effect transistor, when the conductivity type ofimpurities is reversed. This can further apply with a complementaryfield-effect transistor, for example, when methods such as aphotolithography method are used to inject impurities only in a specificregion in a substrate.

In this semiconductor device, element isolation regions 32 are formed ona P type silicon substrate 31 by a trench isolation method. In the Ptype silicon substrate 31, P well regions 33 are formed. In the P wellregions 33, N channel regions 34 are formed. A gate insulation film 35,and a gate insulation film 40 having an average relative dielectricconstant higher than that of the gate insulation film 35 are formed onthe N channel regions 34, and gate electrodes 36 are formed on the gateinsulation films 35 and 40. Reference numeral 37 denotes source anddrain regions, 38 denotes wirings, and 39 denotes interlayer insulationfilms.

This semiconductor device comprises field-effect transistors includingthe gate insulation films which have several types of average relativedielectric constant. When the load capacitance connected to the drainregion of the field-effect transistor is large, the average relativedielectric constant of the gate insulation film is set to be high. Whenthe load capacitance is small, the average relative dielectric constantof the gate insulation film is set to be low. In this manner, while theload of the element is reduced, the current driving capability can beraised. As a result, there is the semiconductor device which has a highoperation speed.

Here, types of the capacitance which is the load for the drivingfield-effect transistor will be described. FIG. 8 is a schematic view ofthe field-effect transistor whose load capacitance is connected to thedrain region. FIG. 8 shows the driving field-effect transistor on theleft side, and the driven field-effect transistor on the right side.

In the driving field-effect transistor, an overlap capacitance 51 of thegate electrode 36 and drain region 37 is disposed as a parasiticcapacitance of the transistor via a gate insulation film 50. A fringecapacitance 52 of the gate electrode 36 and drain region 37 exists asanother parasitic capacitance via the interlayer insulation film 39. Agate/wiring capacitance 53 of the gate electrode 36 and wiring 38 viathe interlayer insulation film 39, and a junction capacitance 54 of thedrain region 37 exist as connected load capacitances.

Moreover, the driving field-effect transistor is connected to acapacitance 55 between the wiring and substrate and a capacitance 56between the wirings as load capacitances. A channel capacitance 57 ofthe driven field-effect transistor is also connected as the loadcapacitance. Needless to say, when there are a plurality of drivenfield-effect transistors, the respective transistors make the loadcapacitances.

FIGS. 9A and 9B are sectional views of the semiconductor deviceaccording to the first embodiment, shows the driving field-effecttransistor on the left side, and the driven field-effect transistor onthe right side. Furthermore, concerning the driving transistor on theleft side, FIG. 9A shows the second field-effect transistor Q2 connectedto a junction capacitance C2, and FIG. 9B shows the first field-effecttransistor Q1 connected to a junction capacitance C1. Since the size ofthe drain region 37 differs, the junction capacitance C1 connected tothe first field-effect transistor Q1 is larger than the junctioncapacitance C2 connected to the second field-effect transistor.

Therefore, the gate insulation film 40 of the first field-effecttransistor Q1 has a relative dielectric constant larger than that of thegate insulation film 35 of the second field-effect transistor Q2. Thesefirst and second field-effect transistors Q1 and Q2 are integrated onthe same semiconductor substrate.

FIGS. 10A and 10B are sectional views of the semiconductor deviceaccording to the first embodiment, the driving field-effect transistoris shown on the left side, and the driven field-effect transistor isshown on the right side. Furthermore, concerning the driving transistoron the left side, FIG. 10A shows the second field-effect transistor Q2connected to the capacitance C2 between the wiring and substrate, and acapacitance C2′ between the wirings. FIG. 10B shows the firstfield-effect transistor Q1 connected to the capacitance C1 between thewiring and substrate, and a capacitance C1′ between the wirings. Sincethe length of the wiring differs, the capacitances C1 and C1′ connectedto the first field-effect transistor Q1 are larger than the capacitancesC2 and C2′ connected to the second field-effect transistor Q2.

Therefore, the relative dielectric constant of the gate insulation film40 of the first field-effect transistor Q1 is set to be larger than thatof the gate insulation film 35 of the second field-effect transistor Q2.These first and second field-effect transistors are integrated on thesame semiconductor substrate.

FIGS. 11A and 11B are further sectional views of the semiconductordevice according to the first embodiment, the driving field-effecttransistor is shown on the left side, and the driven field-effecttransistor is shown on the right side. Furthermore, concerning thedriving transistor on the left side, FIG. 11A shows the secondfield-effect transistor Q2 in which the channel capacitance C2 of thefield-effect transistor is connected to the drain region. FIG. 11B showsthe first field-effect transistor Q1 in which the channel capacitance C1of the field-effect transistor is connected to the drain region. Since agate length of the field-effect transistor differs, the channelcapacitance C1 of the field-effect transistor connected to the firstfield-effect transistor Q1 is larger than the channel capacitance C2 ofthe field-effect transistor connected to the second field-effecttransistor Q2.

Therefore, the relative dielectric constant of the gate insulation film40 of the first field-effect transistor Q1 is set to be larger than thatof the gate insulation film 35 of the second field-effect transistor Q2.These first and second field-effect transistors Q1 and Q2 are integratedon the same semiconductor substrate.

Second Embodiment

Next, a manufacturing method of the first and second field-effecttransistors Q1, Q2 described in the first embodiment will be describedin a second embodiment. For the sake of the convenience of thedescription, in the described example, Q1 is disposed adjacent to Q2 viathe element isolation region.

First, as shown in FIG. 12, for example, on the P type silicon substrate31, the element isolation regions 32 are formed by the trench isolationmethod. Subsequently, for example, boron (B) ions are implanted into a Pwell forming region at 100 keV, 2.0×10¹³ cm⁻². Thereafter, the P wellregions 33 are formed by a heat process, for example, at 1050° C. for 30seconds.

Next, as shown in FIG. 13, in the P well regions 33, to obtain a desiredthreshold voltage, for example, the B ions are implanted at 30 keV,1.0×10¹³ cm⁻², and the concentration of the surfaces of the N channels34 is adjusted.

Next, as shown in FIG. 14, for example, by methods such as a sputterprocess, an (HfO₂)_(0.5)(SiO₂)_(0.5) film 41 is formed on the siliconsubstrate 31.

Next, as shown in FIG. 15, on the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41, forexample, by a CVD process, a silicon nitride film (nitrogen diffusionpreventive film) 42 having a thickness of 50 nm is deposited, and a partof the film is selectively removed. To selectively remove only one part,for example, by the methods such as a photolithography method, only apart of the semiconductor substrate is coated with a resist, and a partin which the silicon nitride film 42 is exposed may be removed in thisstate. It is possible to remove the silicon nitride film 42 byanisotropic etching such as a reactive ion etching (RIE) process, or byisotropic etching such as a chemical dry etching (CDE) process or a wetprocess.

Next, the silicon substrate 31 is exposed to gases whose temperaturesare raised, such as NH₃, N₂O, NO, and NO₂, and nitrogen is introducedinto a part of the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41. In this process, ina region of the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41 coated with the siliconnitride film 42, nitrogen is hardly introduced. It is to be noted thatto introduce nitrogen, temperature does not have to be necessarilyraised, and the silicon substrate 31 may also be exposed to a nitrogengas, for example, in an excited state. Moreover, nitrogen may beaccelerated and implanted.

Next, as shown in FIG. 16, after removing the silicon nitride film 42,the method comprises: depositing a polycrystalline silicon film having athickness of 100 nm on the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41, forexample, by the CVD process; and processing the polycrystalline siliconfilm by the anisotropic etching such as the RIE process to form the gateelectrodes 36. Subsequently, the anisotropic etching such as the RIEprocess is used to process the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41 in thegate insulation film. It is to be noted that the polycrystalline siliconfilm and (HfO₂)_(0.5)(SiO₂)_(0.5) film 41 may also be processed by theisotropic etching such as the wet etching process.

Next, as shown in FIG. 17, for example, arsenic (As) ions are implantedat 30 keV, 5.0×10¹⁵ cm⁻². Moreover, by the heat process, the sourceregion and drain region 37 are formed.

Next, as shown in FIG. 18, the method comprises: depositing the siliconoxide film 39 as the interlayer insulation film in a thickness of 500nm, for example, by a chemical vapor deposition (CVD) process; andforming wiring holes 43 in the source and drain regions 37 and gateelectrodes 36 by the RIE process.

Next, as shown in FIG. 19, for example, by the sputter process, analuminum film containing 1% of silicon and having a thickness of 300 nmis formed on the whole surface of the silicon substrate 31. Moreover,the aluminum film is subjected to the anisotropic etching such as theRIE process to form the wirings 38.

Thereafter, the semiconductor device is completed through a passivationprocess, and the like.

In order to prevent the precipitation of the metal oxide appearingthrough the heat process subjected to the metal silicate insulationfilm, it is effective to add nitrogen to the metal silicate film.Therefore, in the region of the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41 whichhas been coated with the silicon nitride film 42 in the step shown inFIG. 15, the precipitation of the metal oxide film occurs in the heatprocess (FIG. 17) at the forming time of the source/drain regions 37. Inthe region which has not been coated with the silicon nitride film 42,the metal oxide is inhibited from being precipitated. As a result, thesemiconductor device of the present embodiment is formed including thefield-effect transistor including the gate insulation film 35 having acertain average relative dielectric constant, and the field-effecttransistor including the gate insulation film 40 having a higher averagerelative dielectric constant.

Here, as the integrated element in the semiconductor device, the N typefield-effect transistor has been described in the embodiment. However,the embodiment can also be applied to the P type field-effecttransistor, when the conductivity type of the impurities is reversed.Moreover, when the methods such as the photolithography method are usedto introduce the impurities only into the specific region in thesubstrate, the embodiment can also similarly be applied to thecomplementary field-effect transistor.

Moreover, in addition to the field-effect transistor, the embodiment canalso similarly be applied to the semiconductor device including activeelements such as a bipolar transistor and single electron transistor,diode, or passive elements such as a resistor, inductor, and capacitor.

Furthermore, this also applies to a case in which an opto electronicsintegrated circuit (OEIC), a micro electro mechanical system (MEMS), andthe like are formed. This further applies to the device including theelement which includes a silicon on insulator (SOI) structure.Furthermore, this also applies to the device in which the elements areformed on a substrate subjected to epitaxial growth.

Additionally, here, As is used as the impurities for forming an N typesemiconductor layer, and B is used as the impurities for forming a Ptype semiconductor layer, but other V-group impurities may also be usedas the impurities for forming the N type semiconductor layer, or otherIII-group impurities may also be used as the impurities for forming theP type semiconductor layer. Moreover, the III or V-group impurities mayalso be introduced in the form of compounds containing the impurities.

Moreover, the impurities are introduced using ion implantation, butmethods other than the ion implantation, such as solid-phase diffusionand gas-phase diffusion may also be used. Moreover, methods ofdepositing or developing impurities-containing semiconductors may alsobe used.

Furthermore, here, the element including a single drain structure hasbeen described as an example, but the elements including structuresother than the single drain structure, such as an extension structure, alightly-doped drain (LDD) structure, and a graded diffused drain (GDD)structure may also be constructed.

Additionally, an element including a halo or pocket structure or anelevated source/drain structure may also be constructed. The presentinvention can also similarly be applied to an element in which a channeldoes not extend in parallel with a semiconductor substrate surface, andFINFET in which the channel is formed in parallel with the substratesurface in a plate-shaped semiconductor region disposed vertically tothe substrate surface.

Moreover, here, the impurities are introduced into the source region anddrain region after processing the gate insulation film, but the order ofthe introducing and processing of the impurities is not essential, andthe steps may also be performed in a reverse order.

Furthermore, here, after processing the electrode, the gate insulationfilm is removed from the source region and drain region, but the gateinsulation films on the source region and drain region do not have to benecessarily removed.

Additionally, silicidation is not described herein, but the sourceregion, drain region, or gate electrode may be silicified. Moreover, themethods of depositing or developing the metal layers on the sourceregion, drain region, and gate electrode may also be used.

Moreover, the sputter process is used to form the metal layer for thewiring, and methods different from the sputter process, such as adeposition method may also be used to form the metal layer. Furthermore,the other methods such as a method of selectively developing the metaland a damascene method may also be used.

Furthermore, here, polycrystalline silicon is used in the gateelectrode, but semiconductors such as monocrystal silicon, amorphoussilicon, and germanium-containing silicon, metals, metal-containingcompounds, and stacked layers of these may also be formed.

Additionally, an upper part of the gate electrode has a structure inwhich the electrode is exposed, but insulating materials such as siliconoxide and silicon nitride may also be disposed in the upper part.

Moreover, here, to form the gate electrode, after depositing a gateelectrode material, the anisotropic etching is performed to form theelectrode, but the isotropic etching may also be used/performed in thisstep. Alternatively, embedding methods such as a damascene process mayalso be used to form the gate electrode.

Furthermore, here, the (HfO₂)_(0.5)(SiO₂)_(0.5) film formed by thesputter process is used in the gate insulation film. However, thecompounds of Hf, Si, O by other combinations of valences may also beused. Alternatively, other insulation films including other highlydielectric films of silicates of metals such as Ti, Ce, Zr, Ta, Al, La,Y, Gd, Dy, Pr, various elements-containing silicates, or oxidematerials, or the stacked layers of these may also be used as the gateinsulation film. These elements may also be embedded. When the metalsilicate material is used to realize the insulation films havingdifferent values of the relative dielectric constant by theprecipitation of the metal oxide, the average value of the metalconcentration is preferably about 25% or more.

Additionally, here, even the gate insulation film having the low averagerelative dielectric constant has a thickness equal to that of the gateinsulation film having the high average relative dielectric constant,but there is no necessity in the equal thickness, and the thickness mayalso be different. The semiconductor device may include elementsincluding the gate insulation films which have different thicknesses.

Moreover, the method of forming the gate insulation film is not limitedto the sputter method, and the other methods such as a depositionmethod, CVD method, and epitaxial growth method may also be used. Whenthe oxide of a certain material is used in the gate insulation film, amethod of first forming the film of the material and then oxidizing thefilm may also be used.

Furthermore, the semiconductor device including the element in which aferroelectric film is used in the gate insulation film may also beformed.

Additionally, here, the silicon nitride film is used as the materialwith which a part of the gate insulation film is coated in order toselectively introduce nitrogen only in a part of the gate insulationfilm material, but the other materials may also be used. At least a partof the film may also be left and used as a part of the gate insulationfilm.

Moreover, here, nitrogen is introduced into the insulation film so as toreduce the metal oxide precipitation, but this may also be performed byanother method.

Furthermore, here, distribution of nitrogen to be introduced into thegate insulation film in the insulation film has not been described.However, the essence of the introduction of nitrogen is to inhibit theprecipitation of the metal oxide. Therefore, nitrogen is not necessarilyimportant in the vicinity of opposite interfaces between the gateinsulation film and the semiconductor substrate and between the gateinsulation film and gate electrode. Therefore, even when theconcentration of nitrogen is set to be low in the vicinity of eitherinterface, a similar effect is obtained.

Especially when nitrogen exists in the vicinity of the interface betweenthe gate insulation film and semiconductor substrate, mobility of thecarrier drops, and therefore the current driving capability of thefield-effect transistor drops. Therefore, when the nitrogenconcentration in the vicinity of the interface between the gateinsulation film and the semiconductor substrate is set to be low ascompared with that in the interface between the gate insulation film andgate electrode, an advantage can be obtained that the drop of thecurrent driving capability with the drop of the mobility is avoided.

Moreover, here, a gate sidewall insulation film has not been described.However, even when the gate sidewall insulation film is disposed, thesimilar effect is obtained.

Furthermore, here, the elements are isolated using the trench isolationmethod, but the other methods such as a local oxidation method and mesatype element isolation method may also be used to isolate the elements.

Additionally, here, post oxidation after the formation of the gateelectrode has not been described. However, when a post oxidation step ispossible considering from the gate electrode or the gate insulation filmmaterial, the step may also be performed.

Moreover, here, the silicon oxide film is used as the interlayerinsulation film, but the materials such as silicon oxide, such as alow-dielectric-constant material may also be used in the interlayerinsulation film.

Furthermore, it is also possible to form a self-aligned contact withrespect to a contact hole.

Additionally, here, the semiconductor device including the wiring of asingle layer has been described, but two or more layers of the elementor the wiring may also be disposed.

Third Embodiment

Next, the steps of forming the semiconductor device according to a thirdembodiment will be described with reference to FIGS. 20 to 24.

In the forming steps, after the step shown in FIG. 14 of the secondembodiment, as shown in FIG. 20, the silicon substrate 31 is exposed tothe gases whose temperatures are raised, such as NH₃, N₂O, NO, and NO₂to introduce nitrogen into the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41. Tointroduce nitrogen, without necessarily raising temperature, the siliconsubstrate 31 may also be exposed to the nitrogen gas, for example, inthe excited state. Nitrogen may also be accelerated and implanted.

Next, as shown in FIG. 21, the method comprises: depositing the siliconnitride film 42 having a thickness of 50 nm on the(HfO₂)_(0.5)(SiO₂)_(0.5) film 41, for example, by the CVD process; andselectively removing a part of the film. To selectively remove only onepart, the methods such as the photolithography method may be used tocoat only one part of the silicon substrate 31. In this state, theportion in which silicon nitride is exposed may be removed. Siliconnitride may be removed by the anisotropic etching such as the RIEprocess or by the isotropic etching such as the CDE process and wetprocess.

Next, as shown in FIG. 22, one portion of the (HfO₂)_(0.5)(SiO₂)_(0.5)film 41 is subjected to the anisotropic etching such as the RIE processand removed. To remove the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41, theisotropic etching such as the CDE process and wet process may also beperformed.

Next, as shown in FIG. 23, the methods such as the sputter process areused to form an (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 having a thickness of 5nm.

Next, as shown in FIG. 24, the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 issubjected to the anisotropic etching such as the RIE process toselectively remove only a part of the film. To selectively remove onlyone part, only one part of the silicon substrate 31 is coated withresist by the methods such as the photolithography method. In thisstate, the part in which the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 is exposedmay be removed. It is to be noted that to remove the(HfO₂)_(0.5)(SiO₂)_(0.5) film 44, the isotropic etching may also beperformed such as the CDE process and wet process.

Subsequently, the silicon nitride film 42 is removed. To remove thesilicon nitride film 42, the anisotropic etching such as the RIE processmay also be performed, or the isotropic etching may also be performedsuch as the CDE process and wet process. These steps are also possibleby flatting the film using a chemical mechanical polishing (CMP)process.

The subsequent steps are similar to those shown in and after FIG. 16 ofthe second embodiment. Even in this method, the effect similar to thatof the second embodiment is obtained.

Moreover, the gate insulation film on the element isolation region otherthan a region between two shown field-effect transistors is not removed,but may also be removed.

Furthermore, here, the silicon nitride film 42 is disposed between two(HfO₂)_(0.5)(SiO₂)_(0.5) films in order to form an etching stopper inremoving the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44. When the(HfO₂)_(0.5)(SiO₂)_(0.5) film 44 is removed, the silicon nitride filmdoes not have to be disposed, for example, in a method of designatingtime. The materials other than silicon nitride may also be used. Thesilicon nitride film 42 on the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41, or atleast one part of the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 may also be leftand used as a part of the gate insulation film.

Additionally, here, two Hf silicate films having the same compositionhave been formed. These two do not have to include the same composition,and may also be different films.

Fourth Embodiment

Next, the forming steps of the semiconductor device according to afourth embodiment will be described with reference to FIGS. 25 to 27.

The forming steps of the fourth embodiment comprise: the step shown inFIG. 14 of the second embodiment; thereafter depositing the siliconnitride film 42 having a thickness of 50 nm on the(HfO₂)_(0.5)(SiO₂)_(0.5) film 41, for example, by the CVD process asshown in FIG. 25; and selectively removing one part of the film. Amethod of selectively removing only one part may comprise: using, forexample, the photolithography process to coat only one part of thesilicon substrate 31 with the resist; and removing the portion in whichsilicon nitride is exposed in this state. Silicon nitride may be removedby the anisotropic etching such as the RIE process or by the isotropicetching such as the CDE process or wet process.

Next, as shown in FIG. 26, one part of the (HfO₂)_(0.5)(SiO₂)_(0.5) film41 is subjected to the anisotropic etching such as the RIE process andremoved. It is possible to remove the (HfO₂)_(0.5)(SiO₂)_(0.5) film 41by the isotropic etching such as the CDE process or wet process.

Next, as shown in FIG. 27, the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 having athickness of 5 nm is formed, for example, by the sputter process.

Subsequently, the silicon substrate 31 is exposed to the gases whosetemperatures are raised, such as NH₃, N₂O, NO, and NO₂, to introducenitrogen into the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44. To introducenitrogen, without necessarily raising temperature, the silicon substrate31 may also be exposed to the nitrogen gas, for example, in the excitedstate. Nitrogen may also be accelerated and implanted.

Thereafter, the steps are similar to those shown in and after FIG. 24 ofthe third embodiment.

Moreover, the silicon nitride film 42 is disposed between two(HfO₂)_(0.5)(SiO₂)_(0.5) films 41 and 44 in order to function as abarrier of diffusion, when nitrogen is introduced in(HfO₂)_(0.5)(SiO₂)_(0.5) film 44, or to function as the etching stopper,when the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 is removed.

When the (HfO₂)_(0.5)(SiO₂)_(0.5) film 44 is removed, for example, bythe method of designating the time or a method of adjusting conditionsfor introducing nitrogen, it is also possible not to dispose the siliconnitride film 42. The materials other than silicon nitride may also beused.

Next, a modification example of the present embodiment will be describedwith reference to FIG. 28.

In the forming steps, after the step shown in FIG. 26, as shown in FIG.28, the methods such as the sputter method are used to form a(HfO₂)_(0.5)(SiO₂)_(0.5) film 45 to which, for example, nitrogen isadded in a thickness of 5 nm. The subsequent steps are similar to thoseshown in and after FIG. 24.

Here, the method comprises: first forming the (HfO₂)_(0.5)(SiO₂)_(0.5)film 41; selectively removing one part of the film; and thereafterforming the (HfO₂)_(0.5)(SiO₂)_(0.5) film 45 to which nitrogen is added.However, this order is not essential, and the films may also be formedin the reverse order.

The present invention can be used in a logic circuit, a memory, and asystem LSI apparatus formed by embedding the circuit and memory.

According to the present invention, there is provided the semiconductordevice in which the average relative dielectric constant of the gateinsulation film of the field-effect transistor having a large loadcapacitance is raised and that of the gate insulation film of thefield-effect transistor having a small load capacitance is lowered tominimize the load of the element. Moreover, the current drivingcapability can be raised, and as a result, the operation speed is high.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A manufacturing method of a first and a second field-effecttransistors comprising: forming first and second well forming regionsseparated by a plurality of isolation regions in a semiconductorsubstrate; forming first and second well regions of a first conductivitytype by implanting an impurity of a first conductivity type into thefirst and the second well forming regions; forming a first gateinsulation film on the first and the second well regions; introducingnitrogen into the first gate insulation film by exposing the first gateinsulation film to a nitrogen-containing atmosphere; selectivelyremoving the first gate insulation film on the first well region; newlyforming a second gate insulation film on the first well region; forminga polycrystalline silicon film on the first and the second well regionsvia the first and the second gate insulation films; forming first andsecond gate electrodes above the first and the second well regions byselectively and anisotropically etching the polycrystalline siliconfilm; and forming a first and a second pair of source/drain regions byimplanting and thermally diffusing an impurity of a second conductivitytype into the first and the second well regions, using the first and thesecond gate electrodes as masks, respectively.
 2. The manufacturingmethod according to claim 1, wherein the first and the second gateinsulation film include silicon, oxygen, and a metal element.
 3. Themanufacturing method according to claim 2, wherein the forming of afirst and a second pair of source/drain regions includes precipitatingan oxide of the metal element in the gate insulation film on the firstwell region.